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| 7MBR35SB120 IGBT MODULE (S series) 1200V / 35A / PIM IGBT Modules Features * Low VCE(sat) * Compact package * P.C. board mount * Converter diode bridge, Dynamic brake circuit Applications * Inverter for motor drive * AC and DC servo drive amplifier * Uninterruptible power supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25C unless without specified) Item Collector-Emitter voltage Gate-Emitter voltage Inverter Collector current ICP -IC PC VCES VGES IC ICP Collector power dissipation Repetitive peak reverse voltage Repetitive peak reverse voltage Average output current Surge current (Non-Repetitive) I 2t (Non-Repetitive) PC VRRM VRRM IO IFSM I2 t Tj Tstg Viso 1ms Symbol VCES VGES IC Condition Rat ing 1200 20 50 35 100 70 35 240 1200 20 35 25 70 50 180 1200 1600 35 360 648 +150 -40 to +125 AC 2500 AC 2500 3.5 *1 Unit V V A A A W V V A A W V V A A A 2s C C V N*m Continuous Tc=25C Tc=80C Tc=25C Tc=80C Collector power dissipation Collector-Emitter voltage Gate-Emitter voltage Collector current Brake 1 device Continuous 1ms 1 device Tc=25C Tc=80C Tc=25C Tc=80C Converter 50Hz/60Hz sine wave Tj=150C, 10ms half sine wave Operating junction temperature Storage temperature Isolation between terminal and copper base *2 voltage between thermistor and others *3 Mounting screw torque AC : 1 minute *1 Recommendable value : 2.5 to 3.5 N*m (M5) *2 All terminals should be connected together when isolation test will be done. *3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 24 should be connected together and shorted to copper base. IGBT Modules Electrical characteristics (Tj=25C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Turn-on time Symbol ICES IGES VGE(th) VCE(sat) Cies ton tr tr(i) toff tf VF trr ICES IGES VCE(sat) ton tr toff tf IRRM VFM IRRM R B Condition VCE=1200V, VGE=0V VCE=0V, VGE=20V VCE=20V, IC=35mA VGE=15V, Ic=35A chip terminal VGE=0V, VCE=10V, f=1MHz VCC=600V IC=35A VGE=15V RG=33 IF=35A chip terminal Min. 7MBR35SB120 Characteristics Typ. Max. 1.0 0.2 5.5 7.2 8.5 2.1 2.25 2.7 4200 0.35 0.25 0.1 0.45 0.08 2.3 2.45 1.2 0.6 1.0 0.3 V 3.3 0.35 1.0 0.2 2.7 1.2 0.6 1.0 0.3 1.0 1.5 1.0 520 3450 s mA A V s Unit mA A V V pF s Inverter Turn-off Forward on voltage Reverse recovery time of FRD Zero gate voltage collector current Gate-Emitter leakage current Collector-Emitter saturation voltage Brake Turn-on time Turn-off time Reverse current Forward on voltage Reverse current Resistance B value IF=35A VCES=1200V, VGE=0V VCE=0V, VGE=20V IC=25A, VGE=15V chip terminal VCC=600V IC=25A VGE=15V RG=51 VR=1200V IF=35A chip terminal VR=1600V T=25C T=100C T=25/50C 2.1 2.25 0.35 0.25 0.45 0.08 1.1 1.2 5000 495 3375 Converter mA V mA K Thermistor 465 3305 Thermal resistance Characteristics Item Symbol Condition Min. Inverter IGBT Inverter FWD Brake IGBT Converter Diode With thermal compound Characteristics Typ. Max. 0.52 0.90 0.69 0.75 0.05 Unit Thermal resistance ( 1 device ) Rth(j-c) C/W Contact thermal resistance * Rth(c-f) * This is the value which is defined mounting on the additional cooling fin with thermal compound Equivalent Circuit Schematic [Converter] 21(P) [B ra k e ] 2 2 (P 1 ) [In v er ter ] [T h e rm is to r] 8 2 0 (G u) 1 8 (G v) 1 6 (G w ) 9 1(R) 2(S) 3(T) 7 (B ) 1 9 (E u ) 4 (U ) 1 7 (E v ) 5 (V ) 1 5 (E w ) 6 (W ) 1 4 (G b) 1 3 (G x) 1 2 (G y) 1 1 (G z) 1 0 (E n ) 23(N) 2 4 (N 1 ) IGBT Modules Characteristics (Representative) 7MBR35SB120 [ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 25 C (typ.) 80 VGE= 20V 15V 12V 80 o [ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 125 C (typ.) 15V 12V o VGE= 20V 60 Collector current : Ic [ A ] Collector current : Ic [ A ] 60 10V 40 10V 40 20 20 8V 8V 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] [ Inverter ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) 80 Tj= 25 C o [ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage 10 Tj= 25 C (typ.) o Tj= 125 C o 8 Collector - Emitter voltage : VCE [ V ] 60 Collector current : Ic [ A ] 6 40 4 Ic= 70A 2 Ic= 35A Ic= 17.5A 20 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] 0 5 10 15 20 25 Gate - Emitter voltage : VGE [ V ] [ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) 10000 [ Inverter ] Dynamic Gate charge (typ.) Vcc=600V, Ic=35A, Tj= 25 1000 o VGE=0V, f= 1MHz, Tj= 25 o C C 25 800 Capacitance : Cies, Coes, Cres [ pF ] Collector - Emitter voltage : VCE [ V ] Cies 20 Gate - Emitter voltage : VGE [ V ] 600 15 1000 400 10 Coes Cres 200 5 100 0 5 10 15 20 25 30 35 Collector - Emitter voltage : VCE [ V ] 0 0 100 200 Gate charge : Qg [ nC ] 300 0 400 IGBT Modules 7MBR35SB120 [ Inverter ] Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=33, Tj=25C 1000 1000 [ Inverter ] Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=33, Tj=125C toff 500 toff Switching time : ton, tr, toff, tf [ nsec ] 500 Switching time : ton, tr, toff, tf [ nsec ] ton ton tr tr tf 100 100 tf 50 0 20 40 60 Collector current : Ic [ A ] 50 0 20 40 60 Collector current : Ic [ A ] [ Inverter ] Switching time vs. Gate resistance (typ.) 5000 Vcc=600V, Ic=35A, VGE=15V, Tj=25C 10 [ Inverter ] Switching loss vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=33 Eon(125 C) Switching loss : Eon, Eoff, Err [ mJ/pulse ] 8 o Switching time : ton, tr, toff, tf [ nsec ] 1000 6 Eon(25 C) o 500 toff 4 Eoff(125 C) o ton tr 100 tf 50 10 50 100 ] Eoff(25 C) 2 o o Err(125 C) Err(25 C) o 0 500 0 20 40 60 Gate resistance : Rg [ Collector current : Ic [ A ] [ Inverter ] Switching loss vs. Gate resistance (typ.) [ Inverter ] Reverse bias safe operating area 100 Eon Vcc=600V, Ic=35A, VGE=15V, Tj=125C 25 +VGE=15V, -VGE<15V, Rg>33, Tj<125C = = = Switching loss : Eon, Eoff, Err [ mJ/pulse ] 20 80 15 Collector current : Ic [ A ] Eoff Err 10 50 100 ] 60 10 40 5 20 0 500 Gate resistance : Rg [ 0 0 200 400 600 800 1000 1200 1400 Collector - Emitter voltage : VCE [ V ] IGBT Modules 7MBR35SB120 [ Inverter ] Forward current vs. Forward on voltage (typ.) 80 Tj=125 C o [ Inverter ] Reverse recovery characteristics (typ.) 300 Vcc=600V, VGE=15V,Rg=33 Tj=25 C trr(125 C) o o 60 Reverse recovery time : trr [ nsec ] Reverse recovery current : Irr [ A ] Forward current : IF [ A ] 100 trr(25 C) o 40 20 Irr(125 C) o Irr(25 C) o 0 0 1 2 Forward on voltage : VF [ V ] 3 4 10 0 10 20 30 40 50 60 Forward current : IF [ A ] [ Converter ] Forward current vs. Forward on voltage (typ.) 80 Tj= 25 C o Tj= 125 C o 60 Forward current : IF [ A ] 40 20 0 0.0 0.4 0.8 1.2 1.6 2.0 Forward on voltage : VFM [ V ] Transient thermal resistance 5 200 100 [ Thermistor ] Temperature characteristic (typ.) Thermal resistanse : Rth(j-c) [ **/W ] 1 FWD[Inverter] Conv. Diode Resistance : R [ k ] 1 IGBT[Brake] IGBT[Inverter] 10 0.1 1 0.01 0.001 0.01 0.1 0.1 -60 -40 -20 0 20 40 60 80 o 100 120 140 160 180 Pulse width : Pw [ sec ] Temperature [ C] IGBT Modules 7MBR35SB120 [ Brake ] Collector current vs. Collector-Emitter voltage 60 [ Brake ] Collector current vs. Collector-Emitter voltage 60 Tj= 25 C (typ.) o Tj= 125 C (typ.) o VGE= 20V 50 15V 12V 50 VGE= 20V 15V 12V Collector current : Ic [ A ] Collector current : Ic [ A ] 40 40 10V 30 30 10V 20 20 10 10 8V 8V 0 0 0 1 2 3 4 5 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] Collector - Emitter voltage : VCE [ V ] [ Brake ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) 60 10 [ Brake ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25 C (typ.) o Tj= 25 C o Tj= 125 C 8 Collector - Emitter voltage : VCE [ V ] o 50 Collector current : Ic [ A ] 40 6 30 4 Ic= 50A 2 Ic= 25A Ic= 12.5A 20 10 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] 0 5 10 15 20 25 Gate - Emitter voltage : VGE [ V ] [ Brake ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25 10000 o [ Brake ] Dynamic Gate charge (typ.) Vcc=600V, Ic=25A, Tj= 25 1000 o C C 25 800 Capacitance : Cies, Coes, Cres [ pF ] Collector - Emitter voltage : VCE [ V ] Cies 20 Gate - Emitter voltage : VGE [ V ] 600 15 1000 400 10 Coes Cres 100 0 5 10 15 20 25 30 35 Collector - Emitter voltage : VCE [ V ] 200 5 0 0 50 100 150 200 Gate charge : Qg [ nC ] 0 250 IGBT Modules Outline Drawings, mm 7MBR35SB120 M712 8-R2.250.3 4-o5.50.3 13.09 15.24 21 20 1221 1100.3 19.05 19 18 94.50.3 19.05 17 16 15.24 15 14 3.81 4=15.24 10 11.5 +0.5 0 19.697 3.81 99.60.3 9 621 500.3 11.43 11.43 22 11.5 39.90.3 3.81 15.475 15.24 23 +0.5 0 7 11.665 3.81 24 1 2 3 4 5 6 4.198 4.055 14.995 15.24 15.24 15.24 15.24 15.24 A A 22.86 1.50.3 o0.4 o2.50.1 0.80.2 o2.10.1 3.50.5 1.10.3 Section A-A 10.2 2.90.3 6.50.5 20.51 171 Shows theory dimensions 60.3 1.150.2 57.50.3 3.81 8 |
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